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Epistone Comp-Semi Materials., Co. Ltd.
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 Click to enlarge image
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 Origin |
China |
Epi-Ready Polished GaAs Substrate
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Crystal Materials
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Single Crystal Gallium Arsenide, VGF / LEC grown
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Crystal Orientation
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(1 0 0) / (1 1 1)
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Dopant
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Undoped / Zn
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Si / Te
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Diameter
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50.8 ± 0.25mm / 76.2± 0.25mm / 100.0 ± 0.4mm
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Thickness
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325 ± 25um / 550 ± 25um / 625 ± 25um
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Orientation
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ï¼ 100 ï¼ α 0 ±β 0 , off angle α and accuracy β upon request
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Resistivity
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(1-30)x10 7 Ω.cm
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(1-10)x10 -3 Ω.cm
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Mobility
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≥ 5000 cm 2 / V·sec
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N / A
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Carrier Concentration
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N / A
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(0.1-3.0)×10 18 /cm3
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Etch Pit Density
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≤ 5·10 3cm-2/7·104cm-2
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≤ 5·10 2 cm -2
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Orientation(OF) Flat, EJ / US
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(0-1-1)±0.5deg, 16 ±1.0mm /22±1.0mm/32.5±1.0mm
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Identification(IF) Flat, EJ / US
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(0-1 1) )±5.0 deg, 8 ±1.0mm / 11±1.0mm/ 18±1.0mm
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Front Side Surface
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Polished in Epi-ready Prime grade,
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Backside Surface
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Polished / Lapping or Etched
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Packaging
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N2 filled ï¼ cassette / fluoroware, 25pcs /single piece
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In very competitive / on sale price, we offers 2", 3", and 4" Epi-ready / Test grade semi-insulting GaAs wafers for solar cell application. Single-side and double-side epi-ready polishing wafers are available. Please send you inquiry to us check right specifications
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